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A method is proposed for representing the effective one-electron density-of-states of materials in which some of the valence electrons are extremely localized. If some additional rules regarding nonconducting states and occupation-number dependent states are imposed, this scheme can be used to interpret both the electrical and optical properties of magnetic semiconductors. The materials NiO and CoO are discussed in detail.
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Adler et al. (1969) studied this question.
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