RF sputtered AlxNythin film is deposited on the cavity surface of LD (laser diode) by N2plasma pretreatment. Firstly optimize the preparation process of AlxNyfilm, and test the chemical ratio, reflectivity and optical absorption of the optimized AlxNyfilm by EDX, spectrophotometer and surface thermal lens technology respectively, which verify the feasibility of AlxNyused for facet coating film in LD process; then optimize the N2plasma cleaning process, and use PL to find out that sputtered AlxNypassivation film by N2plasma pretreatment can increase the GaAs surface photoluminescence efficiency by 119%. Finally, a 10 nm thick AlxNypassivation film is coated on cavity surface of LD with optimized N2plasma pretreatment, which leads to a higher reliability than the traditional LD.
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Zhou et al. (2013) studied this question.