A sulfur passivation method for GaAs, CH3CSNH2 treatment has been developed. It is quite effective for removing the surface oxide layer and forming the sulfide passivation layer on GaAs surface. The enhancements of the PL intensity reveal the reduction of the surface recombination velocity and the reduction of density of defect states by this treatment. The synchrotron radiation photoemission spectroscopy measurements show that sulfur atoms bond both Ga and As atoms. After being annealed, a stable sulfur passivation layer is terminated on the surface due to the As2S3 component react with GaAs into the GaS component.
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Lu et al. (1996) studied this question.