Construction of a p-doping free HgCdTe-based laser diode is proposed. Hole injection in the active region is done by carrier tunneling from the valence band to the conduction band through the resonance state formed in a series of quantum wells in an external electric field. The charge carriers are localized in the active region by barrier layers with selective resonant tunneling: for holes on one side and for electrons on the other. Calculations of the resonance state providing interband tunneling are carried out.
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Zholudev et al. (2025) studied this question.
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