Highly uniform monolithic 1 × 12 array ofInGaAs photodiodes

The fabrication and high-uniform performance of monolithically integrated 1 × 12 arrays of InGaAs/InP planar photodiodes are described. For each device of the packaged array at –5 V, the dark current is ~75 pA, the capacitance is ~2.3 pF, the crosstalk capacitance between adjacent diodes is ~0.36 pF, and the quantum efficiency for each diode is 95% at 1.3 µm and 89% at 1 .53 µm. All the deviations of the these measurements in an array are within ±1%.