In this paper, we describe a new GaAs‐based micromachined microstrip line, supported by an electrically supported air‐gapped microstrip line (DAML) structure and developed using RF MEMS techniques to achieve low losses at millimeter‐wave frequency bands with wide impedance ranges. The measured DAML with a 10‐μm post height shows less than 1.5‐dB/cm attenuation at 50 GHz with 20–100Ω, which agrees well with the simulated results.
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Lee et al. (2003) studied this question.
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