SrBi 2 Ta 2 O 9 (SBT) ferroelectric thin films were prepared by metalorganic decomposition on Pt/Ti/SiO2/Si substrates at annealing temperatures ranging from 600 to 750 °C. The SBT thin films were annealed layer by layer during the spin-coating process using a rapid thermal annealing (RTA) furnace. The relative intensity of (200) peak in x-ray diffraction increased with the increase of the annealing temperature. A (200)-predominant film can be formed at 700 and 750 °C. For the film annealed by RTA furnace at 650 °C, the remanent polarization (2Pr) and coercive field (2Ec) were 19.8 μC/cm2 and 116 kV/cm, respectively.
No takes yet. Share an insight, caveat, or question.
Hu et al. (1999) studied this question.
Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context: