GaInP/GaAs heterojunction phototransistors with an emitter guard-ring contact are fabricated. The gain and speed of response of a device is significantly improved by the application of bias to the guard-ring, indicating that the recombination current U surface-dominated and that the quality of the GaInP/GaAs heterojunction interface is high.
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Twynam et al. (1989) studied this question.