Bychkov–Rashba dominated band structure in an In0.75Ga0.25As–In0.75Al0.25As device with spin-split carrier densities of <1011 cm−2 , Holmes, S N, Simmonds, P J, Beere, H E, Sfigakis, F, Farrer, I, Ritchie, D A, Pepper, M
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