Green photoluminescence (PL) was observed from the Si/In/CeO2 on Si substrates at room temperature. Indium was very thinly deposited on CeO2 at 400 °C. X-ray photoelectron spectroscopy indicated the formation of a cerium hydroxide in the indium-included Si/CeO2 structure. The reacting CeO2 with In became the defective CeO2−x, and then the defective CeO2−x was changed to Ce(OH)4 in poor vacuums and air. The green PL was due to Ce(OH)4. The luminescence disappeared by high-temperature annealing. Another PL peak appeared from the sample annealed at 1000 °C.
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Chong-Geol Kim (2001) studied this question.
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