GaAs/GaAlAs buried quarter ring lasers with a constant stripe shape along the cavity were fabricated by ion beam etching. Threshold currents of 23 mA were obtained for 2 μm-wide and 430 μm-long cavities on a wafer, for which the broad-area threshold current density was l.7 kA/cm2. This structure leaves the rest of the wafer free for optoelectronic integration.
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Sansonetti et al. (1987) studied this question.