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We have determined the pressure coefficients of fundamental energy gap and deep centers in two chalcopyrite semiconductors AgGaS2and CuGaS2from their absorption and photoluminescence spectra. The pressure coefficient of a deep center in AgGaS2is found to belargerthan that of the band gap. A deep center with similar behavior has been reported already in AgGaSe2. We discuss the effect of p‐d hybridization on these coefficients.
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Choi et al. (1996) studied this question.
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