Microwave performance and modeling of InAs/AlSb/GaSb resonant interband tunneling diodes

The microwave frequency performance of InAs/ AlSb/GaSb resonant interband tunneling diodes has been examined experimentally. A bias-dependent small-signal circuit model that matches the measured data well for the full range of measured frequencies (dc to 35 GHz) and the full range of device biases (0 to 0.5 V) has been obtained. To the author's knowledge, this is the first report of a microwave-frequency circuit model that is valid over the full range of device operating biases, including the negative differential resistance region. The bias dependence of the circuit elements contained within the model is examined, and is consistent with device operational principles.