Zn2SnO4 Nanowires as Photoanode for Dye-Sensitized Solar Cells and the Improvement on Open-Circuit Voltage

In this work dye-sensitized solar cells (DSSCs) based on Zn 2 SnO 4 nanowires were fabricated for the first time. High yield growth of Zn 2 SnO 4 nanowires were achieved through the optimization of the growth conditions. The adsorption of the N719 dye on Zn 2 SnO 4 nanowires and its effect on cell performance were inspected. From a comparison study of Zn 2 SnO 4 nanowire- and nanoparticle-DSSCs, a more than 0.1 V improvement on open-circuit voltage was observed when Zn 2 SnO 4 nanowires were used as the photoanode. The relation between open-circuit voltage and back electron transfer reaction was examined. Due to the advantages of ternary metal oxides and single crystal nanowires, such nanostructures could lead to a more versatile selection for photoanode materials and improved performance of sensitized solar cells.