The authors have investigated the magnetic, electrical, and structural properties of MnxGe1−x (on Ge substrate) nanostructured films produced by a nanopattern assisted Mn implantation followed by annealing. The semiconducting property and hole-mediated ferromagnetism mechanism enabled them to control the magnetic phase transition in the diluted magnetic semiconductor channel by a gate bias.
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Chen et al. (2007) studied this question.
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