The effects of 300-K implantation of 200-keV Cd+ ions and subsequent pulsed laser annealing in GaAs were investigated by means of depth-resolved cathodoluminescence at 80 K. We found that lattice order could be restored sufficiently to increase the implanation-quenched luminescence by 2–3 orders of magnitude with either ruby or Nd:glass lasers. Thus the luminescence is recovered to within an order of magnitude of that in unimplanted material.
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Norris et al. (1981) studied this question.
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