Some electrical characteristics of Cu- and in-doped CuInTe2

A detailed study is made on the effects of annealing CuInTe2 single crystals, both in vacuum and in the presence of elemental Cu and In. The variation of hole concentration with temperature is established and the acceptor state ionization energy is found to lie between 10 and 14 meV. This energy state is associated with the In vacancy. Mobility data are obtained and explained by taking into account various carrier scattering mechanisms including, ionized impurity, acoustic mode phonon, and space charge effects. The valence band deformation potential is found to be 5.35 eV.