We demonstrate experimentally the existence of unpolarized spin states of composite fermions in the fractional quantum Hall effect regime. The modulus of the effective Lande g-factor was reduced using hydrostatic pressure and the transport properties of the first and second hierarchy of composite fermion states were studied in an AlGaAs/GaAs heterojunction in perpendicular magnetic fields. The activation energy of states at filling factor, nu =2/3 and 2/5 show a variation with effective Lande g-factor that is consistent with a spin-unpolarized ground state at these filling factors. The rapid destruction of the energy gap in the first composite fermion hierarchy at nu =2/5 follows the pressure dependence of the effective Lande g-factor of free electrons in GaAs. We show that structure in sigma xx , initially absent at ambient pressure, develops at even filling factor fractions corresponding to metallic states at nu =3/8 and nu =5/12 under reduced Lande g-factor conditions. Consistent behaviour is observed independent of the carrier density in the dilute electron system at 4.4*10 10 and 6.8*10 10 cm -2 .
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Holmes et al. (1994) studied this question.
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