Deals with densification of the thermally grown SiO2 films resulting from intrinsic oxidation stressing. A quantitative model giving the stress levels within the oxide during and after growth evolves from a viscoelastic relaxation scheme. Amount of stress and related quantities such as wafer curvature, refractive index or density are calculated and compared with different kinds of experimental data. As an example, it is demonstrated that low temperature oxidation processes are basically responsible for high density oxides because of Si-SiO2 intrinsic strain.
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Fargeix et al. (1984) studied this question.
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