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A faradaic current on the order of a sub-pico-ampere was detected while fabricating two-dimensional oxide nanostructures on H-passivated Si(001) surfaces. The detected faradaic current has been shown to faithfully reflect the degree of probe oxidation with a clear dependence on the variation of voltage and the tip speed. The faradaic current in dynamic mode can serve as a sensitive monitor of the nano-oxidation reaction for implementing precise closed-loop control of the oxide growth.
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Kuramochi et al. (2004) studied this question.
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