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We combine quantitative analyses of Z-contrast images with composition analyses employing atom probe tomography (APT) correlatively to provide a quantitative measurement of atomic scale interfacial intermixing in an InAs/GaSb superlattice (SL). Contributions from GaSb and InAs in the Z-contrast images are separated using an improved image processing technique. Correlation with high resolution APT composition analyses permits an examination of interfacial segregation of both cations and anions and their incorporation in the short period InAs/GaSb SL. Results revealed short, intermediate, and long-range intermixing of In, Ga, and Sb during molecular beam epitaxial growth and their distribution in the SL.
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Kim et al. (2013) studied this question.
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