Room Temperature Nb-Based Single-Electron Transistors

Room temperature operation of Nb/Nb oxide-based single-electron transistors (SETs) was successfully achieved and was reported in detail. First, the SETs were fabricated using a scanning probe microscope (SPM)-based anodic oxidation technique and then the junction area was further reduced by thermal oxidation. Ultra-small tunnel junctions were easily obtained by utilizing these two types of oxidation processes, and clear single-electron charging effects were observed through the Nb/Nb oxide-based SETs at room temperature.