A nonvolatile magnetic memory based on a planar-type ferromagnetic single electron transistor is proposed. A sense signal dominated by a co-tunneling current under Coulomb blockade enables a low-power operation of the memory. The small tunnel junctions required for a room temperature operation of the device can be consisted of planar-type tunnel junctions fabricated by a nano-oxidation technique using atomic force microscope.
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Takemura et al. (2001) studied this question.
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