Low-temperature growth of Pb(Zr, Ti)O 3 (PZT) thin films, as low as 390°C, by metalorganic chemical vapor deposition (MOCVD) using PbTiO 3 seeds was successfully achieved. Influence of the crystalline nature of PbTiO 3 seeds on crystalline and ferroelectric properties of the PZT thin films were investigated. The orientation of PZT films and its degree were strongly influenced by those of PbTiO 3 seeds. PZT thin films grown at 390°C showed higher orientation as the deposition temperatures of the seeds increased from 380 to 450°C. PZT thin films grown with the 380–450°C-deposited seeds showed remanent polarization (2 P r ) of 6.9–15.9 µC/cm 2 and coercive field (2 E c ) of 93–162 kV/cm. Crystalline and ferroelectric properties of PZT films with and without seeds were also investigated.
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Shimizu et al. (2002) studied this question.