Electron effective masses in an InGaAs quantum well with InAs and GaAs inserts

We have measured and calculated effective masses m* and the band structure of the In0.52Al0.48As/In0.53Ga0.47As/In0.52Al0.48As quantum well on the InP substrate with one or two InAs inserts in the quantum well and GaAs inserts in heterointerface barriers. The effective mass m* was measured by the Shubnikov?de Haas effect. Double symmetric InAs inserts in a quantum well lead to decreasing of m* by about 10%?35% as compared with the uniform In0.53Ga0.47As lattice-matched quantum well.