Analysis of Pb centers at the Si(111)/SiO2 interface following rapid thermal annealing

In this work, an experimental study of defects at the Si(111)/SiO2 interface following rapid thermal annealing (RTA) in a nitrogen ambient at 1040 °C is presented. From a combined analysis using electron spin resonance and quasistatic capacitance–voltage characterization, the dominant defects observed at the Si(111)/SiO2 interface following an inert ambient RTA process are identified unequivocally as the Pb signal (interfacial Si3≡Si⋅) for the oxidized Si(111) orientation. Furthermore, the Pb density inferred from electron spin resonance (7.8±1)×1012 cm−2, is in good agreement with the electrically active interface state density (6.7±1.7)×1012 cm−2 determined from analysis of the quasistatic capacitance–voltage response.