Spectroscopic ellipsometry has been used to study the strained epitaxial layers of GaP on a Si substrate with varying thicknesses. The variation of band-gap energy from the bulk value (ΔE 1) for the GaP layer and Si substrate is determined by a new method of analysis, together with the thicknesses of the surface natural oxide layer and the epitaxial GaP layer. The results are compared with the data from the literature.
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Yu et al. (1995) studied this question.
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