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Heterostructure (GaAs/AlGaAs) Hall-bar devices with a short cross gate are studied in a quantum Hall regime. Anomalous longitudinal resistances and deviations of the Hall resistance from an expected quantized value are quantitatively analyzed in terms of properties of contacts. Reverse-field reciprocity symmetry is observed to demonstrate symmetric properties of contacts.
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Hirai et al. (1989) studied this question.
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