Devices fabricated by using the inner-crystal piezopotential as a "gate" voltage to tune/control the carrier generation, transport, and recombination processes at the vicinity of a p-n junction are named piezo-phototronics. Here, the theory of the photon emission and carrier transport behavior in piezo-phototronic devices is investigated as a p-n junction light-emitting diode. Numerical calculations are given for predicting the photon emission and current-voltage characteristics of a general piezo-phototronic light-emitting diode.
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Zhang et al. (2012) studied this question.
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