Impact of the gate material on the interface state density of metal–oxide–silicon devices with an ultrathin oxide layer

Aluminum, chromium, gold and polycrystalline silicon contacted metal–oxide–silicon devices with ultrathin (∼3 nm) thermal oxides have been compared regarding their electrical characteristics. The impact of the gate material on the features of the interface state density displays itself mainly as a change in the passivation dynamics during heat treatment of what appears to be one and the same as-grown dangling bond defect in all cases.