The correlation of integrated microcathodoluminescence efficiency with crystalline quality and deep trap density of nonpolar GaN films grown by metal organic chemical vapor deposition on semi-insulating 6H-m-SiC or r-sapphire is analyzed. The results suggest a strong influence of nonradiative recombination centers whose concentration decreases with decreased density of extended defects. Electron traps with energy levels at Ec−0.6 eV and which pin the Fermi level in films with high defect density are the most likely candidates for the decrease in light emission efficiency in nonpolar GaN.
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Polyakov et al. (2011) studied this question.
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