Pulse-field evaporation of III–V compound semiconductors was investigated employing our high-performance time-of-flight atom probe, which accommodates the demand for precise knowledge of both mass (focusing type) and energy deficits (straight type) of field-evaporated ion species. We show that laser-pulse mode can yield correct compositions only if an appropriate dc holding field range is used, which is 0.35 to 0.65 for the GaAs presently studied.
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Hashizume et al. (1986) studied this question.
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