The performances of In0.65Ga0.35N single-junction solar cells with different structures, including various doping densities and thicknesses of each layer, have been simulated. It is found that the optimum efficiency of a In0.65Ga0.35N solar cell is 20.284% with 5 × 1017 cm−3 carrier concentration of the front and basic regions, a 130 nm thick p-layer and a 270 nm thick n-layer.
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Zhang et al. (2007) studied this question.
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