Zero-phonon lines in electroluminescence and photoluminescence of ZnS:Mn thin films grown by atomic layer epitaxy

The energy of the zero-phonon-lines of the transition 6A1 → 4E, 6A1 → 4T2 and 4T1 → 6A1 within the 3d-shell of Mn2+ in thin films of ZnS:Mn grown by atomic layer epitaxy (ALE) are determined by luminescence spectroscopy. A comparison of these values with the energies obtained with polymorphic ZnS:Mn single crystals indicates a predominantly hexagonal structure in the thin films in fair agreement with the data obtained by X-ray-analysis. The zero-phonon-lines in both photoluminescence and high field electroluminescence of thin films are compared.