Hydrogen was implanted into IrO2 (200nm)∕Pb(Zr,Ti)O3∕Pt thin film capacitors at 26keV with a flux of 2×1015H+ions∕cm2 and also implanted at 20keV with a flux of 1×1015H+ions∕cm2 into IrO2 (50nm)∕Pb(Zr,Ti)O3∕Pt. The implanted samples showed a net loss in polarization of 20μC∕cm2 as a result of the hydrogen implant and the hysteresis loop was severely distorted. Transmission electron microscopy cross-sectional images and microdiffraction patterns showed no physical damage in the Pb(Zr,Ti)O3 after implanting. Secondary ion mass spectroscopy (SIMS) analysis revealed that a maximum concentration of H of 4×1020atom∕cm3 after implantation. Permittivity measurements also showed a decrease after implantation of 20% or more. After annealing the implanted samples in air at 350°C for 5min the remanent polarization loop and dielectric properties were restored. SRIM-2003 software simulation of the implanted hydrogen revealed that 1% oxygen vacancies are created by implanting using these implant conditions. In addition, hydrogen implanted in the Pb(Zr,Ti)O3 lattice can inhibit the switching of Ti∕Zr by binding with oxygen. The recovery at 350°C indicates that the polarization decrease created by hydrogen implantation is relatively minor and suggests that the degradation mechanism is due to implanted hydrogen in the Pb(Zr,Ti)O3 films.
No takes yet. Share an insight, caveat, or question.
Cross et al. (2006) studied this question.
Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context: