InGaN p-i-n homojunction (HOJ) and heterojunction (HEJ) solar cells (SCs) with similar width of depletion region are investigated. Through comparison of both the material property and device performance, it is demonstrated that HEJ exhibits much better results than HOJ, indicating that HEJ is preferred for fabrication of InGaN SCs. Some suggestions are proposed for the development of InGaN SCs in the future.
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Cai et al. (2013) studied this question.
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