Fast scanning growth of high-quality graphene films on Cu foils fueled by dimeric carbon precursor

Carbon source precursor is a critical factor governing chemical vapor deposition growth of graphene films. Methane (CH 4 ), has been the most commonly used precursor in the last decade, but it presents challenges in terms of decomposition efficiency and growth rate. Here we thoroughly evaluated acetylene (C 2 H 2 ), a precursor that is probably for providing carbon dimer (C 2 ) species, for fast growth of large-scale graphene films. We find that the graphene growth behaviors fueled by C 2 H 2 exhibit unconventional localized growth behavior with significant advantages in terms of high growth rate, which mainly ascribe to the as-decomposed C 2 species. Therefore, a C 2 -fueled scanning growth strategy is proposed, and the fast scanning growth rate of 40 cm/min was experimentally demonstrated. This growth strategy is compatible with the approach of unidirectional growth of single-crystal graphene films, and the as-grown graphene films are of high-quality. This work demonstrates a reliable and promising strategy for the rapid synthesis of high-quality graphene film and may pave the avenue to cost-effective mass production of graphene materials in the roll-to-roll system.