Simple method for the fabrication of a high dielectric constant metal-oxide-semiconductor capacitor embedded with Pt nanoparticles

We present a simple method for the fabrication of Pt nanoparticles embedded in a high-k dielectric. The nanoparticles are formed during the first deposition stages of a thin Pt layer on a 30Å SiO2 tunneling layer, at room temperature, performed with electron-beam (e-beam) evaporation of metallic Pt. Then, the nanoparticles are covered, in situ, by a thicker HfO2 layer, which forms a control oxide. The fabricated nanoparticles have an average diameter of 4.9nm, sheet density of 3.2×1012cm−2 and they present high uniformity in their size. High-frequency capacitance-voltage (C-V) measurements demonstrate that this structure operates as a memory device.