New micromachined pressure sensors based on PZT coated silicon cantilevers have been fabricated and integrated in a photoacoustic gas detector. PZT Sol-gel thin films texture and composition were optimized with respect to the transverse piezoelectric coefficient e31,f. A best value of -12 C/m2 was obtained with (100)/(001) textured thin films at the MPB composition. Optimum stress compensation between the different layers composing the cantilever has been studied in order to yield flat cantilevers. A high response of 150 mV/Pa with a S/N of 700 at 1 Pa and 1 Hz bandwidth has been measured. The influence of the damping chamber under the cantilever is also reported.
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Ledermann et al. (2001) studied this question.
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