The combinatorial material chip strategy is used to study the ferroelectric-paraelectric phase boundary of the Ba1−xSrxTiO3 thin film system. The electro-optic (EO) effect at different compositions is measured using a modified direct-current/alternating-current birefringence EO measurement technique. We find that Ba1−xSrxTiO3 thin films exhibit relaxor like behavior with diffused ferroelectric domains existing well past the previously defined ferroelectric-paraelectric boundary (x>0.3).
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Li et al. (2000) studied this question.
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