Growth of 2H-SiC on 6H-SiC by pulsed laser ablation

A 2H-SiC thin film has been grown on a 6H-SiC substrate by laser ablation using an excimer laser. The deposition of 2H-SiC film occurred in a high vacuum system (≊10−6 Torr) with the substrate temperature near 1200 °C. Plan-view and cross-sectional transmission electron microscopy (TEM) were used to measure the lattice parameters and to identify the polytype. Cross-sectional TEM images clearly show the symmetry of the film as c-axis oriented 2H-SiC containing columnar grains with an average diameter of 20 nm and a length of 100 nm.