Undoped low-temperature-grown AlAs/GaAs superlattices experience pronounced interface intermixing with increasing anneal temperatures up to 900 °C. Quantum confinement shifts caused by intermixing of low-temperature-grown and standard-temperature-grown superlattices were studied using electromodulation spectroscopy. The effective activation energy for intermixing in the low-temperature-grown superlattices during 30 s isochronal postgrowth anneals was found to be (0.32±0.04) eV, anomalously smaller than for standard-temperature-grown superlattices. Roughening of the interfaces caused by arsenic precipitates accompanies the intermixing. Qualitative features of the intermixing have been confirmed using high resolution transmission electron microscopy and studies on x-ray rocking curves.
No takes yet. Share an insight, caveat, or question.
Lahiri et al. (1995) studied this question.
Synapse has enriched 5 related papers. Consider them for comparative context: