For 30 diamond- and zincblende-structure semiconductors, the bond length d, bond polarity alpha p , bulk modulus B, elastic shear constants (c 11 -c 12 )/2 and c 44 , bond-stretching force constant alpha , bond-bending force constant beta , internal displacement parameter zeta , effective atomic charge Z*, transfer parameter beta *, transverse charge e T *, and piezoelectric charge e p * are calculated from bond orbital calculations based on the tight-binding method. The results are compared with previous theoretical calculations and experiments.
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San-Guo Shen (1994) studied this question.
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