Annealing of defects in high-purity niobium after low-temperature irradiation is investigated using perturbed angular correlation of γ rays from the radioactive probes ¹⁰⁰Pd and ¹¹¹In which are deeply implanted by heavy-ion-induced nuclear reactions. The trapping behavior of the two different probes discriminates between interstitials and vacancies. When the data are combined with defect-orientation measurements in a single crystal we conclude that single vacancies are migrating freely at 250 K.
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Sielemann et al. (1982) studied this question.
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