Microcontact Printed RuOx Film as an Activation Layer for Selective-Area Atomic Layer Deposition of Ruthenium

Selective-area atomic layer deposition (ALD) was achieved using microcontact printed RuO x films as an activation layer for ruthenium ALD process. Patterned RuO x films were prepared by transferring RuCl 3 layer by a PDMS (polydimethylsiloxane) stamp to Si(100) substrate and exposing this layer to ozone. Patterned films had either 1.5 μm or about 500 nm wide RuO x lines. Ruthenium was deposited on the activated areas at 250 °C. At this temperature the ruthenium did grow only on the activated areas but not on silicon so that the features of the stamps were repeated on the substrate.