Reliability extrapolation model for stress-induced-leakagecurrent in thin silicon oxides

A novel reliability extrapolation model is proposed for the stress-induced-leakage current (SILC) in very thin oxides. This model relies on the assessment of power laws for the SILC degradation kinetics as a function of both injection dose and stress current density. The SILC degradation rate is found to be almost independent of stress and measuring bias polarity. The simple analytical expressions found for the degradation kinetics enable the SILC intensity to be predicted at nominal operating conditions for both constant current and constant voltage stress.