A two-dimensional analysis of the in-plane misfit stress and its elastic relaxation in rectangular patterned heteroepitaxial SiGe/Si multilayer structures on Si substrate is presented. Based on the model of relaxing film stress the distribution of the misfit stress versus distance from the free surface of a multilayered mesa edge is calculated. By superposition of the isolated stress fields of the mesa edges, the biaxial misfit stress distribution in a finite heteroepitaxial thin-film structure on thick substrate is obtained. The formalism developed permits the determination of the variation of misfit stress values as a function of material and size characteristics of the patterned multilayer-substrate system. An elementary application of the theoretical analysis of the biaxial state of stress existing in the structured layer system is discussed briefly.
No takes yet. Share an insight, caveat, or question.
Fischer et al. (1994) studied this question.
Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context: