We report the observation of quantum confinement, using photoluminescence, in InSb-In1−xAlxSb (0.08≤x≤0.23) multiquantum well samples grown by molecular beam epitaxy. A series of samples were studied with different well widths and varying concentration of aluminum in the barriers. The upshifted luminescence energies behave qualitatively as expected due to changes in confinement, and are in good quantitative agreement with calculated upshifts taking into account strain in the barriers. These results demonstrate that good quality heterostructures can be obtained in this material system and show its potential for device applications.
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Saker et al. (1994) studied this question.
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