Two phosphorus centers in SiC, an isolated P atom substituting for Si (PSi) and a Si-site P-atom adjacent to a carbon vacancy (PSi+VC) are investigated by first principle calculations. It is shown that PSi+VC produces a singly occupied donor level which lies deeper than that of PSi but above the double donor level of VC. The calculated spin distribution indicates that the P-related paramagnetic resonance signals, P1,2 and P-V, originate from this complex.
No takes yet. Share an insight, caveat, or question.
Gali et al. (2000) studied this question.
Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context: