Impurity diffusion in the δ layer during the process of its growth has been considered. Experiments show that the spreading of the impurity profile has a complex dependence on the in-plane impurity concentration. We carried out the numerical simulation of the self-consistent diffusion problem for the impurities moving in their own random electric field and have shown that at some critical impurity concentration in δ layer the impurity distribution function perpendicular to the layer acquires a non-Gaussian character.
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Averkiev et al. (2000) studied this question.
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